Germanium outperforms silicon in energy efficient transistors with n- und p- conduction

A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at Technische Universität Dresden have demonstrated the world-wide first transistor based on germanium that can be programmed between electron- (n) and hole- (p) conduction.

For more information see press release.

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